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| Datasheet File OCR Text: |
| NTE2384 MOSFET N-Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain-Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Pulsed Drain Current (TC = +25C), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A Continuous Drain Current, ID TC = +30C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A Total Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Typical Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Static Characteristics Drain-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf VDD = 30V, ID = 2.6A, VGS = 10V, RGS = 50, Rgen = 50 ID = 250A, VGS = 0 VGS = 0, VDS = 800V, TJ = +25C VGS = 0, VDS = 800V, TJ = +125C Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On Resistance Dynamic Characteristics Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance Turn-On Time Rise Time Turn-Off Delay Time Fall Time VDS = 25V, ID = 3A VDS = 25V, VGS = 0, f = 1MHz 1.8 - - - - - - - 3.0 3900 200 80 60 90 330 110 - 5000 350 140 90 140 430 140 mho pf pf pf ns ns ns ns VDS = 0, VGS = 20V VDS = VGS, ID = 1mA VGS = 10V, ID = 3A 800 - - - 2.1 - - 20 0.1 10 3.0 1.3 - 250 1.0 100 4.0 1.5 V A mA nA V Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Dynamic Characteristics (Cont'd) Internal Drain Inductance LD Measured from contact screw on header closer to source pin and center of die Measured from the source lead 6mm from package to source bonding pad - 5.0 - nH Symbol Test Conditions Min Typ Max Unit Internal Source Inductance LS - 12.5 - nH Source-Drain Diode Ratings and Characteristics Continuous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward Voltage Reverse Recovery Time Reverse Recovered Charge IDR IDRM VSD trr Qrr TC = +25C TC = +25C IF = 12A, VGS = 0, TJ = +25C IF = 6A, TJ = +25C VGS = 0, VR = 100V, TJ = +25C, diF/dt = 100A/s, - - - - - - - 1.1 1800 25 6 24 1.5 - - A A V ns C .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Source 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .215 (5.45) .430 (10.92) .188 (4.8) R Max Gate .525 (13.35) R Max Drain/Case |
Price & Availability of NTE2384
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